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| NJG1134HA8 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1134HA8 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, this IC is integrated the ESD protection circuit. An ultra-small and ultra-thin package of USB6-A8 is adopted. PACKAGE OUTLINE NJG1134HA8 FEATURES Low voltage operation Low voltage control Package [High gain mode] Low current consumption Gain Low noise figure High input IP3 [Low gain mode] Low current consumption Gain High input IP3 +2.8V typ. +1.8V typ. USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.) 4.0mA typ. 10.0dB typ. 1.2dB typ.@ fRF=470~620MHz +5.0dBm typ. 10A typ. -0.6dB typ. +23.0dBm typ. PIN CONFIGURATION (Top View) 6 1 1 Pin INDEX Bias Circuit 5 Logic Circuit Pin Connection 1. RFIN1 2. RFOUT1 3. RFIN2 4. RFOUT2 5. VCTL 6. GND 2 3 TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) 4 VCTL H L LNA Mode High Gain mode Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2008-02-29 -1- NJG1134HA8 ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50 ohm PARAMETER Drain voltage Control voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VCTL PIN PD Topr Tstg VDD=2.8V On PCB board, Tjmax=150C CONDITIONS RATINGS 5.0 5.0 +15 150 -40~+95 -55~+150 UNITS V V dBm mW C C ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=2.8V, Ta=+25C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating voltage Control voltage (High) Control voltage (Low) Operating current1 Operating current2 Control current SYMBOL VDD VCTL(H) VCTL(L) IDD1 IDD2 ICTL High Gain mode Low Gain mode RF OFF, VCTL=1.8V RF OFF, VCTL=0.0V RF OFF, VCTL=1.8V CONDITIONS MIN TYP MAX UNITS V V V mA A A 2.3 1.3 0 - 2.8 1.8 0 4.0 10.0 6.0 3.6 3.6 0.5 5.6 25.0 10.0 -2- NJG1134HA8 ELECTRICAL CHARACTERISTICS2 (High Gain mode) General conditions: VDD= 2.8V, VCTL=1.8V, Ta=+25C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating frequency Small signal gain1 Gain flatness Noise figure1 Noise figure2 Noise figure3 Input power at 1dB gain compression point1 Input 3rd order intercept point1 RF IN VSWR1 RF OUT VSWR1 SYMBOL fRF Gain1 Gflat NF1 NF2 NF3 P-1dB(IN)1 CONDITIONS MIN 470 9.0 TYP 620 10.0 MAX 770 12.5 UNITS MHz dB dB dB dB dB dBm dBm Exclude PCB & connector losses, fRF=470~620MHz*1 Exclude PCB & connector losses, fRF=620~710MHz*1 Exclude PCB & connector losses, fRF=710~770MHz*1 -9.0 f1=fRF, f2=fRF+100kHz, PIN=-28dBm +0.0 - 1.1 1.20 1.25 1.30 -5.0 +5.0 2.7 3.0 1.6 1.45 1.50 1.55 3.3 3.8 IIP3_1 VSWRi1 VSWRo1 ELECTRICAL CHARACTERISTICS3 (Low Gain mode) General conditions: VDD= 2.8V, VCTL=0V, Ta=+25C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating frequency Small signal gain2 Input power at 1dB gain compression point2 Input 3rd order intercept point2 RF IN VSWR2 RF OUT VSWR2 SYMBOL fRF Gain2 P-1dB(IN)2 CONDITIONS MIN 470 TYP 620 -0.6 +4.0 MAX 770 - UNITS MHz dB dBm dBm Exclude PCB & connector losses*2 -1.8 -3.0 IIP3_2 VSWRi2 VSWRo2 f1=fRF, f2=fRF+100kHz, PIN=-15dBm +10.0 - +23.0 1.2 1.2 1.5 1.5 *1 Input PCB and connector losses: 0.036dB(at 470MHz), 0.053dB(at 770MHz) *2 Input-output PCB and connector losses: 0.072dB(at 470MHz), 0.105dB(at 770MHz) -3- NJG1134HA8 TERMINAL INFORMATION No. SYMBOL DESCRIPTION RF input terminal. The RF signal is input through the external matching circuit. This terminal is connected with the ground through L1 shown in the application circuit. At the High gain mode, RF signal comes out from this terminal, and is input into RFIN2 terminal through L2. Please supply power through L3 shown in the application circuit since this terminal also function supply voltage terminal. At the High gain mode, RF signal comes out from RFOUT1 terminal, and is input into this terminal. Please connect this terminal with RFOUT1 terminal through L2 shown in the application circuit. RF output terminal. External capacitor C3 is required to block the DC bias voltage of internal circuit. 1 RFIN1 2 RFOUT1 3 RFIN2 4 RFOUT2 5 VCTL Control voltage supply terminal. 6 GND Ground terminal. * RF signal input terminal is RFIN1, and the RF signal output terminal is RFOUT2. -4- NJG1134HA8 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. Pout vs. Pin (f=620MHz) 10 5 0 -5 Pout (dBm) Gain (dB) -10 Pout -15 -20 -25 -30 P-1dB(IN)=-2.6dBm -35 -40 4 -35 -30 -25 -20 Pin (dBm) -15 -10 -5 0 -40 -35 -30 -25 -20 -15 -10 -5 0 Pin (dBm) IDD (mA) NF (dB) 9 8 IDD 7 6 5 P-1dB(IN)=-2.6dBm 0 5 4 3 2 1 12 11 10 Gain, IDD vs. Pin (f=620MHz) 8 Gain 7 6 Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz) 20 12 11 10 Gain (dB) 9 8 7 6 Gain, NF vs. Frequency 4 Gain 3.5 3 2.5 2 1.5 NF 1 0.5 (Exclude PCB, Connector Losses) 0 400 450 500 550 600 650 700 750 800 Frequency (MHz) 0 -20 Pout Pout, IM3 (dBm) -40 -60 -80 IM3 -100 -40 -30 -20 -10 IIP3=+7.2dBm 0 10 5 4 Pin (dBm) P-1dB(IN) vs. Frequency 5 20 IIP3, OIP3 vs. Frequency (f1=frequency, f2=f1+100kHz, Pin=-28dBm) OIP3 0 P-1dB(IN) -5 IIP3, OIP3 (dBm) 15 P-1dB(IN) (dBm) 10 IIP3 5 -10 -15 400 450 500 550 600 650 Frequency (MHz) 700 750 800 0 400 450 500 550 600 650 700 750 800 Frequency (MHz) -5- NJG1134HA8 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. K-factor vs. Frequency 20 IDD, Gain, NF vs. VDD (f=620MHz) 12 6 10 15 Gain 5 4 NF (dB) IDD (mA), Gain (dB) 8 K-factor 10 6 IDD 4 NF 2 3 2 1 5 0 0 5000 10000 15000 20000 0 0 1 2 3 VDD (V) 4 5 Frequency (MHz) 0 P-1dB(IN) vs. VDD (f=620MHz) 5 25 IIP3, OIP3 vs. VDD (f1=620MHz, f2=620.1MHz, Pin=-28dBm) 20 0 P-1dB(IN) (dBm) IIP3, OIP3 (dBm) 15 OIP3 10 -5 P-1dB(IN) 5 0 -10 IIP3 -15 0 1 2 VDD (V) 3 4 5 -5 0 1 2 VDD (V) 3 4 5 VSWR vs. VDD 8 7 VSWRi(max.), VSWRo(max) 4 5 IDD vs. VCTL 6 IDD (mA) 5 4 VSWRo(max.) 3 2 1 0 0 1 2 VDD (V) 3 4 5 VSWRi(max.) 3 2 1 0 0 0.5 1 1.5 2 VCTL (V) -6- NJG1134HA8 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. Gain, NF vs. Temp. (fRF=620MHz) 12 11 10 Gain (dB) 9 8 7 NF 6 5 4 -50 Gain 4 3.5 3 2.5 NF (dB) 2 1.5 1 0.5 0 100 -15 -50 P-1dB(IN) (dBm) 0 P-1dB(IN) 5 P-1dB(IN) vs. Temp. (fRF=620MHz) -5 -10 0 50 Temperature ( C) o 0 50 o Temperature ( C) 100 IIP3, OIP3 vs. Temp. (f1=620MHz, f2=620.1MHz, Pin=-28dBm) 25 7 6 20 OIP3 IIP3, OIP3 (dBm) IDD (mA) 15 5 4 3 2 1 0 -50 0 -50 IDD vs. Temp. (RF OFF) IDD 10 IIP3 5 0 o 50 Temperature ( C) 100 0 o 50 Temperature ( C) 100 VSWR vs. Temp. (fRF=470~770MHz) 8 7 VSWRi(max.), VSWRo(max.) IDD vs. VCTL 5 4 6 5 IDD (mA) 3 95 C 2 75 C 50 C o o o 4 3 2 1 0 -50 VSWRo(max.) 0C -25 C -40 C o o o VSWRi(max.) 25 C 1 o 0 0 o 50 Temperature ( C) 100 0 0.5 1 VCTL (V) 1.5 2 -7- NJG1134HA8 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25C, VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit. S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) -8- NJG1134HA8 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. Pout vs. Pin (f=620MHz) 10 5 0 -5 Pout (dBm) -1 Gain (dB) -10 -15 Pout -20 -25 -30 -35 -40 -40 -30 P-1dB(IN)=+3.5dBm -3 -20 -10 Pin (dBm) 0 10 20 -40 -30 -20 -10 Pin (dBm) 0 10 20 -0.5 Gain 2 IDD (mA) 2.5 0 Gain, IDD vs. Pin (f=620MHz) 3 -1.5 IDD 1.5 -2 1 -2.5 P-1dB(IN)=+3.5dBm 0.5 0 Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz) 20 Gain vs. Frequency 0 0 -0.2 Pout, IM3 (dBm) -20 Pout -40 Gain (dB) -0.4 -0.6 -60 IM3 -80 IIP3=+23.0dBm -100 -40 -30 -20 -10 0 10 20 30 Gain -0.8 (Exclude PCB, Connector Losses) -1 400 450 500 550 600 650 700 750 800 Pin (dBm) Frequency (MHz) P-1dB(IN) vs. Frequency 15 28 IIP3, OIP3 vs. Frequency (f1=frequency , f2=f1+100kHz, Pin=-15dBm) 26 P-1dB(IN) (dBm) IIP3, OIP3 (dBm) 10 IIP3 24 OIP3 22 5 P-1dB(IN) 20 0 400 450 500 550 600 650 Frequency (MHz) 700 750 800 18 400 450 500 550 600 650 700 750 800 Frequency (MHz) -9- NJG1134HA8 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. K-factor vs. Frequency 20 15 K-factor 10 5 0 0 5000 10000 15000 20000 Frequency (MHz) - 10 - NJG1134HA8 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. Gain vs. Temp. (fRF=620MHz) 0 15 P-1dB(IN) vs. Temp. (fRF=620MHz) -0.5 -1 Gain (dB) Gain P-1dB(IN) (dBm) 10 P-1dB(IN) 5 -1.5 -2 -2.5 0 -3 -50 0 50 Temperature ( C) o 100 -5 -50 0 50 o Temperature ( C) 100 IIP3, OIP3 vs. Temp. (f1=620MHz, f2=620.1MHz, Pin=-15dBm) 30 IIP3 25 OIP3 IIP3, OIP3 (dBm) 20 IDD (A) IDD 15 20 IDD vs. Temp. (RF OFF) 15 10 10 5 5 0 -50 0 o 50 Temperature ( C) 100 0 -50 0 o 50 Temperature ( C) 100 VSWR vs. Temp. (fRF=470~770MHz) 3 VSWRi(max.), VSWRo(max.) 2.5 2 VSWRo(max.) 1.5 1 0.5 VSWRi(max.) 0 -50 0 o 50 Temperature ( C) 100 - 11 - NJG1134HA8 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25C, VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit. S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) - 12 - NJG1134HA8 APPLICATION CIRCUIT C1 RF IN 68pF L1 33nH Bias Circuit Logic Circuit RFIN1 GND VCTL 6 VCTL=1.8V or 0.0V 1 5 C3 68pF 2 L2 68nH VDD=2.8V C2 1000pF L3 33nH RFOUT1 RFIN2 4 3 RFOUT2 RF OUT TEST PCB LAYOUT VCTL Parts List RF IN C1 L1 C3 L2 L3 C2 Parts ID RF OUT Notes MURATA (LQP03T series) TAIYO-YUDEN (HK0603 series) MURATA (GRM03 series) L1, L3 L2 C1~C3 VDD PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50 ohm) PCB SIZE=16.8mmx16.8mm PRECAUTIONS [1] C1 and C3 are DC-Blocking capacitors, and L1 is a DC-feed inductor. [2] L2 and L3 formed the output matching circuit. [3] C2 is a bypass capacitor. [4] Ground terminals (6pin) should be connected with ground plane as close as possible in order to limit ground path induction. [5] All external parts are placed as close as possible to the IC. - 13 - NJG1134HA8 MEASUREMENT BLOCK DIAGRAM VCTL=1.8V or 0.0V VDD =2.8V RF Input DUT RF Output Network Analyzer S parameter Measurement Block Diagram VCTL=1.8V VDD =2.8V RF Input DUT RF Output Noise Source NF Analyzer Noise Figure Measurement Block Diagram freq.1 Signal Generator VCTL=1.8V or 0.0V 2dB Attenuator VDD =2.8V RF Input Signal Generator DUT RF Output Spectrum Analyzer Power Comb. 2dB Attenuator freq.2 Input IP3 Measurement Block Diagram - 14 - NJG1134HA8 PACKAGE OUTLINE (USB6-A8) 0.380.06 +0.012 0.038-0.009 S 0.03 S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :1.1mg 0.2 (MIN0.15) 6 5 1.20.05 0.20.04 C0.1 R0.05 1 0.10.05 Photo resist coating 0.8 0.4 0.6 0.20.04 2 3 0.4 1.00.05 0.20.07 4 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 15 - |
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